Model: 2N6153

Thyristor Semiconductor Device

Properties:

Overall Length
Between 0.635 inches and 0.645 inches
Terminal Length
Between 0.595 inches and 0.645 inches
Overall Width
Between 0.495 inches and 0.505 inches
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
600.0 repetitive peak off-state voltage and 1.8 on-state voltage, peak
Current Rating Per Characteristic
100.00 amperes emitter current, dc absolute
Power Rating Per Characteristic
20.0 watts any acceptable blank and 0.5 watts any acceptable universal
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius junction
NSN
5961-01-175-2936
Part Number
2N6153
Description
Semiconductor Device,thyristor
CAGE
04713

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N6153 NSN 5961-01-175-2936

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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