Model: 2N6080

Transistor

Special Features:

derate j to c 68.0 milliwatts; on-state current 50 megahertz; part name assigned by controlling agency - silicon npn power transistor

Properties:

Semiconductor Material
Silicon alloy
Voltage Rating In Volts Per Characteristic
38.0 breakdown voltage, collector-to-base, emitter open and 18.0 breakdown voltage, collector-to-emitter, base open and 4.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
Between 500.00 milliamperes source cutoff current and 1000.00 milliamperes source cutoff current and 0.25 milliamperes zero-gate-voltage source current preset
Power Rating Per Characteristic
12.0 watts small-signal input power, common-emitter peak
Transfer Ratio
5.0 static forward current transfer ratio, common-emitter
NSN
5961-01-478-4342
Part Number
2N6080
Description
Transistor
CAGE
04713

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N6080 NSN 5961-01-478-4342

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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