Model: 2N6051

Transistor

Properties:

Inclosure Material
Metal
Overall Length
Between 1.553 inches and 1.573 inches
Terminal Length
0.438 inches
Overall Height
Between 0.250 inches and 0.450 inches
Overall Width
1.050 inches
Mounting Facility Quantity
2
Internal Configuration
Junction contact-darlington connected
Electrode Internally-electrically Connected To Case
Collector
Internal Junction Configuration
Pnp
Mounting Method
Unthreaded hole
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
80.0 breakdown voltage, collector-to-emitter, base open and 80.0 collector to base voltage, dc and 5.0 emitter to base voltage, dc
Current Rating Per Characteristic
10.00 amperes source cutoff current and 0.20 amperes source cutoff current
Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector absolute
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Terminal Type And Quantity
2 pin and 1 case
NSN
5961-01-076-0452
Part Number
2N6051
Description
Transistor
CAGE

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N6051 NSN 5961-01-076-0452

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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