Model: 2N5875

Transistor
Description:

Metal inclosure material, 1.573 inches overall length, 0.450 inches overall height, 1.050 inches overall width, forrestal class cv, teletype, model 28, kidd class ddg, arleigh burke class ddg, spruance class dd (963) , nimitz class cvn, ticonderoga class cg (47) , landing craft air cushion (lcac) , all-weather anti-ship harpoon (agm-84) , air to air phoenix (aim-54) missle. End item identification.

Special Features:

Weapon system essential; junction pattern arrangement: npn

Properties:

Inclosure Material
Metal
Overall Length
1.573 inches
Overall Height
0.450 inches
Overall Width
1.050 inches
End Application
Forrestal class cv, teletype, model 28, kidd class ddg, arleigh burke class ddg, spruance class dd (963), nimitz class cvn, ticonderoga class cg (47), landing craft air cushion (lcac), all-weather anti-ship harpoon (agm-84), air to air phoenix (aim-54) missle.
Mounting Facility Quantity
2
Internal Configuration
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-3
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Unthreaded hole
Features Provided
Hermetically sealed case
Criticality Code Justification
Feat
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
80.0 breakdown voltage, collector-to-emitter, base open and 5.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
Between 4.00 amperes source cutoff current and 10.00 amperes source cutoff current
Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Terminal Type And Quantity
1 case and 2 pin
Specification Data
80131-release6104 professional/industrial association specification
NSN
5961-00-008-2650
Part Number
2N5875
Description
Transistor
CAGE
04713

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N5875 NSN 5961-00-008-2650

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
B
ESD:
B
MMAC:
EH
CRITL:
Y

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.1000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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