Model: 2N585

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.410 inches
Terminal Length
1.500 inches
Overall Diameter
0.240 inches
Internal Configuration
Junction contact
Internal Junction Configuration
Npn
Mounting Method
Terminal
Features Provided
Hermetically sealed case
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
25.0 breakdown voltage, collector-to-base, emitter open and 24.0 breakdown voltage, collector-to-emitter, base open and 20.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
200.00 milliamperes source cutoff current and 8.00 microamperes zero-gate-voltage source current preset
Power Rating Per Characteristic
120.0 milliwatts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
80.0 degrees celsius ambient air
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-00-726-4513
Part Number
2N585
Description
Transistor
CAGE
1MY79

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N585 NSN 5961-00-726-4513

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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