Model: 2N5765

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Ceramic
Overall Length
0.120 inches
Overall Height
0.125 inches
Overall Diameter
0.285 inches
End Application
General application electronics (gen-ap-e)
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
55.0 breakdown voltage, collector-to-base, emitter open
Current Rating Per Characteristic
1.50 amperes source cutoff current
Power Rating Per Characteristic
19.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius ambient air
Thread Series Designator
Unf
Terminal Type And Quantity
4 tab, solder lug
NSN
5961-00-169-4599
Part Number
2N5765
Description
Transistor
CAGE
08125

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N5765 NSN 5961-00-169-4599

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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