Model: 2N5637

Transistor

Special Features:

4 strip line terminals; junction pattern arrangement: npn

Properties:

Inclosure Material
Ceramic and metal
Overall Length
Between 1.055 inches and 1.065 inches
Overall Height
Between 0.710 inches and 0.750 inches
Overall Width
Between 1.055 inches and 1.065 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Mounting Method
Threaded stud
Thread Size
0.160 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
60.0 breakdown voltage, collector-to-base, emitter open and 4.0 breakdown voltage, emitter-to-base, collector open and 35.0 breakdown voltage, collector-to-emitter, base open
Current Rating Per Characteristic
3.00 amperes source cutoff current
Power Rating Per Characteristic
30.0 watts small-signal input power, common-collector absolute
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius ambient air
Thread Series Designator
Unc
NSN
5961-00-322-7957
Part Number
2N5637
Description
Transistor
CAGE
04713

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N5637 NSN 5961-00-322-7957

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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