Model: 2N5589

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Glass
Overall Length
Between 1.055 inches and 1.065 inches
Overall Height
Between 0.710 inches and 0.750 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Mounting Method
Threaded stud
Thread Size
0.164 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
36.0 breakdown voltage, collector-to-base, emitter open and 18.0 breakdown voltage, collector-to-emitter, base open and 4.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
600.00 milliamperes zero-gate-voltage source current blank
Power Rating Per Characteristic
15.0 watts small-signal input power, common-collector absolute
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius ambient air
Thread Series Designator
Unc
Terminal Type And Quantity
4 tab, solder lug
NSN
5961-00-307-4161
Part Number
2N5589
Description
Transistor
CAGE
5V1P1

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N5589 NSN 5961-00-307-4161

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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