Model: 2N5070

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.320 inches
Overall Width
0.480 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Emitter
Internal Junction Configuration
Npn
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
65.0 breakdown voltage, collector-to-base, emitter open
Power Rating Per Characteristic
70.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius ambient air
Thread Series Designator
Unf
Terminal Type And Quantity
3 pin
NSN
5961-01-044-1891
Part Number
2N5070
Description
Transistor
CAGE
80131

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N5070 NSN 5961-01-044-1891

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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