Model: 2N4976

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Overall Height
Between 0.645 inches and 0.695 inches
Overall Diameter
Between 0.355 inches and 0.375 inches
Internal Configuration
Junction contact
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
30.0 breakdown voltage, collector-to-emitter, base open
Current Rating Per Characteristic
400.00 milliamperes source cutoff current
Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector absolute
Terminal Type And Quantity
3 tab, solder lug
NSN
5961-00-092-0784
Part Number
2N4976
Description
Transistor
CAGE
01281

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N4976 NSN 5961-00-092-0784

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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