Model: 2N4856

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.188 inches
Terminal Length
0.500 inches
Overall Diameter
0.220 inches
Internal Configuration
Field effect
Electrode Internally-electrically Connected To Case
Gate
Mounting Method
Terminal
Terminal Circle Diameter
0.100 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
40.0 breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 40.0 breakdown voltage, gate-to-source, with all other terminals short-circuited to source
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-00-104-1169
Part Number
2N4856
Description
Transistor
CAGE
01295

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N4856 NSN 5961-00-104-1169

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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