Model: 2N4276

Transistor

Special Features:

Junction pattern arrangement: pnp

Properties:

Inclosure Material
Metal
Overall Length
Between 0.250 inches and 0.450 inches
Overall Height
0.762 inches
Overall Diameter
0.875 inches
End Application
Computer update equipment (cue)
Mounting Facility Quantity
2
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Unthreaded hole
Features Provided
Hermetically sealed case
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
30.0 breakdown voltage, collector-to-base, emitter open
Current Rating Per Characteristic
60.00 amperes all primaries
Power Rating Per Characteristic
170.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius junction
Terminal Type And Quantity
2 pin
NSN
5961-00-140-1071
Part Number
2N4276
Description
Transistor
CAGE
04713

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N4276 NSN 5961-00-140-1071

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
LVL_A:
Q
LVL_B:
Q

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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