Model: 2N4148

Thyristor Semiconductor Device

Special Features:

Junction pattern arrangement: pnpn

Properties:

Overall Length
Between 0.115 inches and 0.150 inches
Terminal Length
0.500 inches
Internal Configuration
Junction contact
Mounting Method
Terminal
Terminal Circle Diameter
0.100 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
150.0 forward voltage, peak and 150.0 reverse voltage, peak and 0.8 gate trigger voltage, dc
Current Rating Per Characteristic
0.250 amperes all primaries preset and 1.00 milliamperes forward current, total rms preset
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction
NSN
5961-01-221-6525
Part Number
2N4148
Description
Semiconductor Device,thyristor
CAGE
80131

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N4148 NSN 5961-01-221-6525

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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