Model: 2N3997A

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.394 inches
Overall Diameter
0.348 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Internal Junction Configuration
Npn
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Overall Width Across Flats
0.437 inches
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
5.0 collector to base voltage, dc
Current Rating Per Characteristic
5.00 amperes source cutoff current
Power Rating Per Characteristic
30.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Thread Series Designator
Unf
Terminal Type And Quantity
3 tab, solder lug and 1 threaded stud
Specification Data
80131-release5148 professional/industrial association specification
NSN
5961-00-442-9454
Part Number
2N3997A
Description
Transistor
CAGE
C7191

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N3997A NSN 5961-00-442-9454

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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