Model: 2N396A

Transistor

Properties:

Internal Configuration
Junction contact
Internal Junction Configuration
Pnp
Features Provided
Hermetically sealed case
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
30.0 breakdown voltage, collector-to-base, emitter open
Current Rating Per Characteristic
200.00 milliamperes source cutoff current
Power Rating Per Characteristic
200.0 milliwatts small-signal input power, common-collector
Terminal Type And Quantity
3 uninsulated wire lead
Specification Data
80131-2n396a professional/industrial association standard
NSN
5961-00-755-6463
Part Number
2N396A
Description
Transistor
CAGE
5V1P1

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N396A NSN 5961-00-755-6463

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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