Model: 2N3960

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.210 inches
Terminal Length
0.500 inches
Overall Diameter
0.230 inches
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Collector
Internal Junction Configuration
Npn
Mounting Method
Terminal
Terminal Circle Diameter
0.100 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
20.0 breakdown voltage, collector-to-base, emitter open and 12.0 breakdown voltage, collector-to-emitter, base open and 4.5 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
30.00 milliamperes source cutoff current
Power Rating Per Characteristic
400.0 milliwatts small-signal input power, common-collector
Terminal Type And Quantity
3 uninsulated wire lead
Specification Data
80131-release5181 government specification
NSN
5961-00-781-3063
Part Number
2N3960
Description
Transistor
CAGE
5V1P1

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N3960 NSN 5961-00-781-3063

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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