Model: 2N3396

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Plastic
Overall Length
0.265 inches
Terminal Length
0.500 inches
Overall Diameter
0.205 inches
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Emitter
Mounting Method
Terminal
Terminal Circle Diameter
0.100 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
25.0 breakdown voltage, collector-to-base, emitter open
Current Rating Per Characteristic
100.00 milliamperes source cutoff current
Power Rating Per Characteristic
360.0 milliwatts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-00-579-8176
Part Number
2N3396
Description
Transistor
CAGE
80131

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N3396 NSN 5961-00-579-8176

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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