Model: 2N3331

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.210 inches
Terminal Length
0.500 inches
Overall Diameter
0.230 inches
Internal Configuration
Field effect
Mounting Method
Terminal
Terminal Circle Diameter
0.100 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
15.0 drain to source voltage and 20.0 breakdown voltage, gate-to-source, with all other terminals short-circuited to source
Current Rating Per Characteristic
10.00 milliamperes gate current
Power Rating Per Characteristic
300.0 milliwatts collector power dissipation
Terminal Type And Quantity
4 uninsulated wire lead
Specification Data
80131-release4671 professional/industrial association specification
NSN
5961-00-481-0993
Part Number
2N3331
Description
Transistor
CAGE
80131

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N3331 NSN 5961-00-481-0993

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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