Model: 2N2982

Unitized Semiconductor Devices

Special Features:

All transistor junction pattern arrangement: npn

Properties:

Inclosure Material
Metal
Overall Length
0.210 inches
Terminal Length
0.500 inches
Overall Diameter
0.230 inches
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-71
Component Name And Quantity
2 transistor
Mounting Method
Terminal
Terminal Circle Diameter
0.100 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon all transistor
Voltage Rating In Volts Per Characteristic
100.0 breakdown voltage, collector-to-base, emitter open all transistor and 60.0 breakdown voltage, collector-to-emitter, base open all transistor and 7.0 emitter to base voltage, static, collector open all transistor
Current Rating Per Characteristic
500.00 milliamperes source cutoff current all transistor
Power Rating Per Characteristic
250.0 milliwatts small-signal input power, common-collector preset all transistor
Transfer Ratio
40.0 small-signal short-circuit forward current transfer ratio, common-emitter all transistor
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Terminal Type And Quantity
8 uninsulated wire lead
Specification Data
80131-release4394 professional/industrial association specification
NSN
5961-00-228-5690
Part Number
2N2982
Description
Semiconductor Devices,unitized
CAGE
04713

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Part 2N2982 NSN 5961-00-228-5690

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
61962
FIIG:
A110A0
Concept No.:
App. Key:
E
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
B
ESD:
B
MMAC:
SX
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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