Model: 2N2769

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Metal
Overall Length
0.750 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Overall Width Across Flats
0.875 inches
Thread Size
0.312 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
50.0 breakdown voltage, collector-to-base, emitter open and 15.0 breakdown voltage, emitter-to-base, collector open and 50.0 breakdown voltage, collector-to-emitter, base open
Current Rating Per Characteristic
30.00 amperes source cutoff current and 7.50 amperes source cutoff current
Power Rating Per Characteristic
2.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius case
Thread Series Designator
Unf
Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud and 1 wire hook
Specification Data
80131-release4201 professional/industrial association specification
NSN
5961-00-177-3493
Part Number
2N2769
Description
Transistor
CAGE
80131

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N2769 NSN 5961-00-177-3493

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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