Model: 2N2326AS

Thyristor Semiconductor Device

Special Features:

Junction pattern arrangement: pnpn

Properties:

Inclosure Material
Metal
Overall Length
Between 0.240 inches and 0.260 inches
Terminal Length
Between 0.500 inches and 0.750 inches
Overall Diameter
Between 0.335 inches and 0.370 inches
Internal Configuration
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-5
Electrode Internally-electrically Connected To Case
Anode
Mounting Method
Terminal
Terminal Circle Diameter
0.200 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
2.2 forward voltage, peak and 200.0 reverse voltage, peak and 300.0 nonrepetitive peak reverse voltage, peak total value
Current Rating Per Characteristic
0.22 amperes forward current, average absolute and 15.00 amperes forward current, average preset
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius ambient air
Precious Material And Location
Terminal surface option gold
Precious Material
Gold
Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
Terminal Type And Quantity
3 uninsulated wire lead
Specification Data
81349-mil-s-19500/276 government specification
NSN
5961-01-212-8019
Part Number
2N2326AS
Description
Semiconductor Device,thyristor
CAGE
50507

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N2326AS NSN 5961-01-212-8019

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
G
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.1000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
M
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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