Model: 2N2223A TIN/LEAD

Unitized Semiconductor Devices

Special Features:

All transistor junction pattern arrangement: npn

Properties:

Inclosure Material
Metal
Overall Length
Between 0.150 inches and 0.260 inches
Overall Diameter
Between 0.335 inches and 0.370 inches
Function For Which Designed
Amplifier
Component Name And Quantity
2 transistor
Mounting Method
Terminal
Semiconductor Material
Silicon all transistor
Voltage Rating In Volts Per Characteristic
100.0 collector to base voltage/static/emitter open all transistor and 60.0 collector to emitter voltage/static/base open all transistor and 7.0 emitter to base voltage, static, collector open all transistor and 80.0 collector-to-emitter, resistance between base and emitter all transistor
Current Rating Per Characteristic
500.00 milliamperes source cutoff current all transistor
Power Rating Per Characteristic
3.0 watts small-signal input power, common-collector absolute all transistor
Power Rating Per Characteristic
1.6 watts small-signal input power, common-collector absolute 1st transistor
Power Rating Per Characteristic
1.6 watts small-signal input power, common-collector absolute 2nd transistor
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Terminal Type And Quantity
6 uninsulated wire lead
NSN
5961-00-953-4494
Part Number
2N2223A TIN/LEAD
Description
Semiconductor Devices,unitized
CAGE
55464

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Part 2N2223A TIN/LEAD NSN 5961-00-953-4494

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
61962
FIIG:
A110A0
Concept No.:
App. Key:
E
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
EH
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.5000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
M
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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