Model: 2N1845A

Thyristor Semiconductor Device

Special Features:

3 terminals, threaded stud and solderless lug

Properties:

Inclosure Material
Metal
Overall Length
0.417 inches
Mounting Facility Quantity
1
Electrode Internally-electrically Connected To Case
Anode
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Thread Size
0.250 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
150.0 off-state voltage, rms total
Current Rating Per Characteristic
10.00 amperes drain current nanoamperes
Maximum Operating Tempurature Per Measurement Point
105.0 degrees celsius case
Thread Series Designator
Unf
Terminal Type And Quantity
1 threaded stud and 2 tab, solder lug
NSN
5961-00-237-3341
Part Number
2N1845A
Description
Semiconductor Device,thyristor
CAGE

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N1845A NSN 5961-00-237-3341

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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