Model: 2N173

Transistor

Special Features:

Junction pattern arrangement: pnp

Properties:

Overall Height
0.520 inches
Overall Diameter
1.250 inches
Internal Configuration
Junction contact
Features Provided
Hermetically sealed case
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
60.0 breakdown voltage, collector-to-base, emitter open and 40.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
Between 4.00 amperes source cutoff current and 15.00 amperes source cutoff current
Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector
NSN
5961-00-617-4345
Part Number
2N173
Description
Transistor
CAGE
80131

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N173 NSN 5961-00-617-4345

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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