Model: 2N1530

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.375 inches
Overall Diameter
0.875 inches
Mounting Facility Quantity
2
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Collector
Internal Junction Configuration
Pnp
Mounting Method
Unthreaded hole
Features Provided
Hermetically sealed case
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
60.0 breakdown voltage, collector-to-base, emitter open and 45.0 breakdown voltage, collector-to-emitter, base open and 30.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
Between 5.00 amperes source cutoff current and 5.00 amperes source cutoff current
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius junction
Terminal Type And Quantity
2 uninsulated wire lead and 1 case
NSN
5961-00-799-9010
Part Number
2N1530
Description
Transistor
CAGE
5V1P1

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N1530 NSN 5961-00-799-9010

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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