Model: 2N1370-5

Transistor

Special Features:

Junction pattern arrangement: pnp

Properties:

Inclosure Material
Metal
Overall Length
0.250 inches
Terminal Length
1.500 inches
Internal Configuration
Junction contact
Mounting Method
Terminal
Terminal Circle Diameter
0.200 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
25.0 breakdown voltage, collector-to-base, emitter open
Current Rating Per Characteristic
200.00 milliamperes source cutoff current
Power Rating Per Characteristic
250.0 milliwatts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
Nondefinitive Specification/std Data
2n1370-5 type
NSN
5961-00-995-1025
Part Number
2N1370-5
Description
Transistor
CAGE
80131

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N1370-5 NSN 5961-00-995-1025

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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