Model: 2N123

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.250 inches
Terminal Length
1.500 inches
Overall Diameter
0.370 inches
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Base
Internal Junction Configuration
Pnp
Mounting Method
Terminal
Terminal Circle Diameter
0.200 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
20.0 collector to base voltage/static/emitter open
Current Rating Per Characteristic
125.00 milliamperes all primaries
Power Rating Per Characteristic
150.0 milliwatts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius ambient air
Terminal Type And Quantity
3 uninsulated wire lead
Nondefinitive Specification/std Data
2n123 type
NSN
5961-00-833-6633
Part Number
2N123
Description
Transistor
CAGE
81349

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N123 NSN 5961-00-833-6633

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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