Model: 2N1170

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.260 inches
Terminal Length
1.500 inches
Overall Diameter
0.315 inches
Internal Configuration
Junction contact
Internal Junction Configuration
Npn
Mounting Method
Terminal
Terminal Circle Diameter
0.200 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
40.0 collector to base voltage, dc and 20.0 collector to emitter voltage/static/base open and 40.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic
400.00 milliamperes source cutoff current and 400.00 milliamperes source cutoff current
Power Rating Per Characteristic
120.0 watts small-signal input power, common-collector preset
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-00-901-6506
Part Number
2N1170
Description
Transistor
CAGE
1MY79

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N1170 NSN 5961-00-901-6506

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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