Model: 2N1119

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.250 inches
Terminal Length
1.500 inches
Overall Diameter
0.359 inches
Internal Configuration
Junction contact
Internal Junction Configuration
Pnp
Mounting Method
Terminal
Terminal Circle Diameter
0.200 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
10.0 breakdown voltage, collector-to-base, emitter open and 10.0 breakdown voltage, collector-to-emitter, base open and 10.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
50.00 milliamperes source cutoff current
Power Rating Per Characteristic
150.0 milliwatts small-signal input power, common-collector
Terminal Type And Quantity
3 uninsulated wire lead
Specification Data
80131-release2611 professional/industrial association specification
NSN
5961-00-810-4223
Part Number
2N1119
Description
Transistor
CAGE
80131

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N1119 NSN 5961-00-810-4223

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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