Model: 2N1067

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Overall Height
Between 0.270 inches and 0.330 inches
Overall Diameter
Between 0.270 inches and 0.370 inches
Internal Configuration
Junction contact
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
60.0 breakdown voltage, collector-to-base, emitter open and 30.0 breakdown voltage, collector-to-emitter, base open and 12.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
200.00 milliamperes zero-gate-voltage source current blank and 500.00 microamperes zero-gate-voltage source current preset
Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector
Terminal Type And Quantity
3 uninsulated wire lead
Specification Data
80131-release 2402 professional/industrial association standard
NSN
5961-00-751-1750
Part Number
2N1067
Description
Transistor
CAGE
80131

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N1067 NSN 5961-00-751-1750

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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