Model: 2N1035

Transistor

Properties:

Inclosure Material
Metal
Overall Length
Between 0.240 inches and 0.260 inches
Terminal Length
1.500 inches
Overall Diameter
Between 0.335 inches and 0.370 inches
Internal Configuration
Junction contact
Internal Junction Configuration
Pnp
Mounting Method
Terminal
Terminal Circle Diameter
0.200 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
50.0 breakdown voltage, collector-to-base, emitter open and 50.0 breakdown voltage, collector-to-emitter, base open and 20.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
50.00 milliamperes source cutoff current and 1.00 microamperes zero-gate-voltage source current preset
Power Rating Per Characteristic
250.0 milliwatts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
165.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-00-685-9301
Part Number
2N1035
Description
Transistor
CAGE
3B150

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N1035 NSN 5961-00-685-9301

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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