Model: 2N1016D

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.550 inches
Overall Diameter
1.280 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Internal Junction Configuration
Npn
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Thread Size
0.312 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
200.0 breakdown voltage, collector-to-base, emitter open and 200.0 breakdown voltage, collector-to-emitter, base open and 25.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic
7.50 amperes source cutoff current
Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius junction
Thread Series Designator
Unf
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-00-918-6484
Part Number
2N1016D
Description
Transistor
CAGE
05277

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N1016D NSN 5961-00-918-6484

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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