Model: 2N1015C

Transistor

Properties:

Overall Height
0.560 inches
Overall Diameter
1.280 inches
Internal Configuration
Junction contact
Internal Junction Configuration
Npn
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
150.0 breakdown voltage, collector-to-emitter, base open
Current Rating Per Characteristic
7.50 amperes source cutoff current
Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector
Terminal Type And Quantity
1 uninsulated wire lead and 2 solder stud
Specification Data
80131-fia2700 professional/industrial association standard
NSN
5961-00-810-2763
Part Number
2N1015C
Description
Transistor
CAGE
80131

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2N1015C NSN 5961-00-810-2763

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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