Model: 2BK511320/3

Thyristor Semiconductor Device

Properties:

Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-39
Voltage Rating In Volts Per Characteristic
200.0 repetitive peak off-state voltage and 200.0 repetitive peak reverse voltage
Current Rating Per Characteristic
300.00 milliamperes drain current nanoamperes and 15.00 amperes forward current, dc nanoamperes and 30.00 amperes drain current megawatts
NSN
5961-01-288-3252
Part Number
2BK511320/3
Description
Semiconductor Device,thyristor
CAGE

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 2BK511320/3 NSN 5961-01-288-3252

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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