Model: 21809

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Internal Configuration
Junction contact
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
100.0 collector to base voltage, dc and 80.0 breakdown voltage, collector to emitter, sustained and 5.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic
4.00 amperes source cutoff current
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius ambient air
NSN
5961-01-125-5191
Part Number
21809
Description
Transistor
CAGE
30377

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 21809 NSN 5961-01-125-5191

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
00
LVL_A:
Q
LVL_B:
Q

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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