Model: 200-1100

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Ceramic or plastic
Overall Length
Between 0.605 inches and 0.650 inches
Terminal Length
0.540 inches
Internal Configuration
Junction contact-darlington connected
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
5.0 emitter to base voltage, instantaneous
Current Rating Per Characteristic
2.00 amperes all primaries
Power Rating Per Characteristic
50.0 watts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-110-7438
Part Number
200-1100
Description
Transistor
CAGE

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 200-1100 NSN 5961-01-110-7438

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
00
LVL_A:
Q
LVL_B:
Q

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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