Model: 1RF6603

Transistor

Properties:

Inclosure Material
Glass or plastic
Overall Length
Between 6.25 millimeters and 6.35 millimeters
Overall Height
Between 0.59 millimeters and 0.70 millimeters
Overall Width
Between 4.80 millimeters and 5.05 millimeters
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
30.0 drain to source voltage
Current Rating Per Characteristic
27.0 amperes drain current
Power Rating Per Characteristic
3.6 watts total power dissipation
Terminal Type And Quantity
2 bonding pad
NSN
5961-01-630-6194
Part Number
1RF6603
Description
Transistor
CAGE
59993

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 1RF6603 NSN 5961-01-630-6194

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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