Model: 1N829

Diode Semiconductor Device

Properties:

Inclosure Material
Glass
Overall Length
0.300 inches
Terminal Length
1.000 inches
Overall Diameter
0.130 inches
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
6.5 breakdown voltage, dc
Current Rating Per Characteristic
35.00 milliamperes repetitive peak forward current
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius ambient air
Terminal Type And Quantity
2 uninsulated wire lead
NSN
5961-00-127-4008
Part Number
1N829
Description
Semiconductor Device,diode
CAGE
04713

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 1N829 NSN 5961-00-127-4008

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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