Model: 1N823

Diode Semiconductor Device
Description:

Glass inclosure material, 0.120 inches overall length, 1.000 inches terminal length, 0.060 inches overall diameter, terminal mounting method.

Properties:

Inclosure Material
Glass
Overall Length
Between 0.120 inches and 0.300 inches
Terminal Length
Between 1.000 inches and 1.500 inches
Overall Diameter
Between 0.060 inches and 0.107 inches
Mounting Method
Terminal
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
6.2 regulator voltage
Voltage Tolerance In Percent
-5.0 to 5.0
Current Rating Per Characteristic
70.00 milliamperes dc current in reverse breakdown region
Power Rating Per Characteristic
500.0 milliwatts total power dissipation
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius ambient air
Terminal Type And Quantity
2 uninsulated wire lead
NSN
5961-00-034-5790
Part Number
1N823
Description
Semiconductor Device,diode
CAGE
80131

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 1N823 NSN 5961-00-034-5790

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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