Model: 1N5712

Diode Semiconductor Device

Properties:

Inclosure Material
Glass
Overall Length
Between 0.150 inches and 0.170 inches
Terminal Length
1.000 inches
Overall Diameter
Between 0.068 inches and 0.076 inches
Mounting Method
Terminal
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
20.0 breakdown voltage, dc
Current Rating Per Characteristic
10.00 microamperes forward current, average peak
Power Rating Per Characteristic
250.0 milliwatts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius ambient air
Terminal Type And Quantity
2 uninsulated wire lead
NSN
5961-01-328-2841
Part Number
1N5712
Description
Semiconductor Device,diode
CAGE
50434

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 1N5712 NSN 5961-01-328-2841

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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