Model: 1N5470A

Diode Semiconductor Device

Properties:

Inclosure Material
Glass
Overall Length
0.300 inches
Terminal Length
1.000 inches
Overall Diameter
0.107 inches
Mounting Method
Terminal
Terminal Circle Diameter
0.020 inches
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
30.0 reverse breakdown voltage, dc
Current Rating Per Characteristic
0.02 milliamperes forward current, average peak
Power Rating Per Characteristic
400.0 milliwatts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius junction
Terminal Type And Quantity
2 uninsulated wire lead
NSN
5961-00-449-1420
Part Number
1N5470A
Description
Semiconductor Device,diode
CAGE
81349

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 1N5470A NSN 5961-00-449-1420

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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