Model: 1N3892

Thyristor Semiconductor Device

Properties:

Overall Length
0.800 inches
Overall Diameter
0.424 inches
Mounting Facility Quantity
1
Joint Electronic Device Engineering Council/jedec/case Outline Designation
D0-4
Mounting Method
Threaded stud
Overall Width Across Flats
0.430 inches
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
400.0 working peak reverse voltage
Current Rating Per Characteristic
12.00 amperes forward current, total rms megahertz
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius junction
Thread Series Designator
Unf
Terminal Type And Quantity
1 threaded stud and 1 tab, solder lug
NSN
5961-01-076-7723
Part Number
1N3892
Description
Semiconductor Device,thyristor
CAGE
04713

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part 1N3892 NSN 5961-01-076-7723

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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