Model: 1N3317B

Diode Semiconductor Device

Properties:

Inclosure Material
Metal
Overall Length
0.450 inches
Overall Diameter
0.667 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Overall Width Across Flats
Between 0.667 inches and 0.687 inches
Thread Size
0.250 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
18.9 breakdown voltage, dc
Current Rating Per Characteristic
2640.00 milliamperes repetitive peak forward current
Current Rating Per Characteristic
2640.00 milliamperes reverse surge current
Power Rating Per Characteristic
50.0 watts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius case
Thread Series Designator
Unf
Terminal Type And Quantity
1 threaded stud and 1 tab, solder lug
NSN
5961-00-177-3382
Part Number
1N3317B
Description
Semiconductor Device,diode
CAGE
12954

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 1N3317B NSN 5961-00-177-3382

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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