Model: 1N2981RB

Diode Semiconductor Device

Properties:

Inclosure Material
Glass and metal
Overall Length
0.375 inches
Overall Diameter
0.424 inches
Mounting Facility Quantity
1
Joint Electronic Device Engineering Council/jedec/case Outline Designation
D0-4
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Thread Size
0.168 inches
Semiconductor Material
Silicon
Power Rating Per Characteristic
10.0 watts forward power dissipation, dc
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius junction
Thread Series Designator
Unf
Terminal Type And Quantity
1 tab, solder lug and 1 threaded stud
NSN
5961-01-059-0437
Part Number
1N2981RB
Description
Semiconductor Device,diode
CAGE
12954

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 1N2981RB NSN 5961-01-059-0437

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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