Model: 1N249B

Diode Semiconductor Device

Properties:

Inclosure Material
Metal
Overall Length
1.103 inches
Mounting Facility Quantity
1
Joint Electronic Device Engineering Council/jedec/case Outline Designation
D0-5
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Overall Width Across Flats
0.687 inches
Thread Size
0.250 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
100.0 reverse voltage, peak and 1.5 on voltage, forward voltage drop, dc
Current Rating Per Characteristic
20.00 amperes forward current, average absolute
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius junction
Thread Series Designator
Unf
Terminal Type And Quantity
1 tab, solder lug and 1 threaded stud
Nondefinitive Specification/std Data
1n249b type
NSN
5961-00-712-3938
Part Number
1N249B
Description
Semiconductor Device,diode
CAGE
80131

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 1N249B NSN 5961-00-712-3938

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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