Model: 1N1612

Diode Semiconductor Device

Properties:

Inclosure Material
Glass
Overall Length
0.405 inches
Overall Width
0.437 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Thread Size
0.169 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
50.0 working peak reverse voltage
Current Rating Per Characteristic
5.00 amperes forward current, average absolute
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius ambient air
Thread Series Designator
Unf
Terminal Type And Quantity
3 tab, solder lug
Specification Data
80131-1n1612 manufacturers specification
NSN
5961-00-905-2370
Part Number
1N1612
Description
Semiconductor Device,diode
CAGE
80131

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 1N1612 NSN 5961-00-905-2370

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
100.0
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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