Model: 1N1369R

Diode Semiconductor Device

Properties:

Inclosure Material
Metal
Overall Length
0.405 inches
Overall Diameter
0.424 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Overall Width Across Flats
Between 0.424 inches and 0.437 inches
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
56.0 regulator voltage
Current Rating Per Characteristic
150.00 milliamperes source cutoff current horsepower metric
Power Rating Per Characteristic
10.0 watts small-signal input power, common-collector absolute
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius ambient air
Thread Series Designator
Unf
Terminal Type And Quantity
1 tab, solder lug and 1 threaded stud
NSN
5961-00-687-1155
Part Number
1N1369R
Description
Semiconductor Device,diode
CAGE
99942

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 1N1369R NSN 5961-00-687-1155

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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