Model: 1N1201RA

Diode Semiconductor Device

Properties:

Inclosure Material
Metal
Overall Length
0.405 inches
Overall Width
0.437 inches
Mounting Facility Quantity
2
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
150.0 working peak reverse voltage
Current Rating Per Characteristic
12.00 amperes forward current, average absolute
Current Rating Per Characteristic
12.00 amperes average forward current averaged over a full 60-hz cycle
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Thread Series Designator
Unf
Terminal Type And Quantity
1 tab, solder lug and 1 threaded stud
Nondefinitive Specification/std Data
1n1201ra type
NSN
5961-00-116-9363
Part Number
1N1201RA
Description
Semiconductor Device,diode
CAGE
80131

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 1N1201RA NSN 5961-00-116-9363

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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