Model: 1N1200B

Diode Semiconductor Device

Properties:

Inclosure Material
Metal
Overall Length
0.800 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Overall Width Across Flats
Between 0.424 inches and 0.437 inches
Thready Qty Per Inch (tpi)
32
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
100.0 repetitive peak reverse voltage and 100.0 working peak reverse voltage and 200.0 nonrepetitive peak reverse voltage
Current Rating Per Characteristic
12.00 amperes forward current, average absolute and 250.00 amperes forward current, average preset
Thread Series Designator
Unf
Terminal Type And Quantity
1 threaded stud
NSN
5961-01-203-6924
Part Number
1N1200B
Description
Semiconductor Device,diode
CAGE
80131

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 1N1200B NSN 5961-01-203-6924

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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