Model: 1N1116

Diode Semiconductor Device

Properties:

Inclosure Material
Metal
Overall Length
0.405 inches
Overall Height
0.405 inches
Overall Width
0.437 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
200.0 working peak reverse voltage
Current Rating Per Characteristic
1.50 amperes forward current, average absolute
Maximum Operating Tempurature Per Measurement Point
170.0 degrees celsius ambient air
Thread Series Designator
Unf
Terminal Type And Quantity
1 tab, solder lug and 2 threaded stud
NSN
5961-00-565-6131
Part Number
1N1116
Description
Semiconductor Device,diode
CAGE
81483

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part 1N1116 NSN 5961-00-565-6131

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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